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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2017-05-24Al2O3 Passivation Effect in HfO2 center dot Al2O3 Laminate Structures Grown on InP SubstratesKang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho
2019-02-15Effects of thermal and electrical stress on defect generation in InAs metal-oxide-semiconductor capacitorBaik, Min; Kang, Hang-Kyu; Kang, Yu-Seon; Jeong, Kwang-Sik; Lee, Changmin; Kim, Hyoungsub; Song, Jin-Dong; Cho, Mann-Ho
2017-09-12Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer depositionBaik, Min; Kang, Hang-Kyu; Kang, Yu-Seon; Jeong, Kwang-Sik; An, Youngseo; Choi, Seongheum; Kim, Hyoungsub; Song, Jin-Dong; Cho, Mann-Ho
2016-03-23Structural and Electrical Properties of EOT HfO2 (< 1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal StabilityKang, Yu-Seon; Kang, Hang-Kyu; Kim, Dae-Kyoung; Jeong, Kwang-Sik; Baik, Min; An, Youngseo; Kim, Hyoungsub; Song, Jin-Dong; Cho, Mann-Ho
2022-11Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decadeBaek, Ji-Min; Kim, Hyo-Jin; Yoo, Ji-Hoon; Shin, Ju-Won; Shin, Ki-Yong; Amir, Walid; Ju, Gunwu; Kim, Hyung-Jun; Oh, Joohee; Kim, Hyoungsub; Kim, Tae-Woo; Kim, Dae-Hyun
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