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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2025-08Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistorsKim, Kyung Do; Ryoo, Seung Kyu; Yeom, Min Kyu; Lee, Suk Hyun; Choi, Wonho; Kim, Yunjae; Choi, Jung-Hae; Xin, Tianjiao; Cheng, Yan; Hwang, Cheol Seong
2025-05Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfNx interfacial layerNam, Hyun Woo; Lee, Jae Hoon; Ryoo, Seung Kyu; Shin, Seong Jae; Ye, Kun Hee; Kim, Kyung Do; Byun, Seung yong; Lee, In Soo; Lee, Suk Hyun; Song, Jae Hee; Choi, Jung hae; Hwang, Cheol Seong
2024-10Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin filmsShin, Jonghoon; Shin, Dong Hoon; Kim, Kyung Do; Seo, Haengha; Ye, Kun Hee; Jeon, Jeong Woo; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Lee, Suk Hyun; Choi, Jung-Hae; Hwang, Cheol Seong
2024-04Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layersShin, Jonghoon; Seo, Haengha; Ye, Kun Hee; Jang, Yoon Ho; Kwon, Dae Seon; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Kim, Ha Ni; Byun, Seungyong; Shin, Seong Jae; Kim, Kyung Do; Lee, Yong Bin; Lee, In Soo; Choi, Jung-Hae; Hwang, Cheol Seong
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