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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2017-1210-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital EtchLu, W.; Roh, I. P.; Geum, D. -M.; del Alamo, J. A.; Song, J. D.; Kong, L.; Kim, S. -H.
2015-11Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect EngineeringMa, J. W.; Lee, W. J.; Bae, J. M.; Jeong, K. S.; Oh, S. H.; Kim, J. H.; Kim, S. -H.; Seo, J. -H.; Ahn, J. -P.; Kim, H.; Cho, M. -H.
2016-11III-V/Ge MOS device technologies for low power integrated systemsTakagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.
2023-06Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapsesJin, D. -G.; Kim, S. -G.; Jeon, H.; Park, E. -J.; Kim, S. -H.; Kim, Y-Y.; Yu, H. -Y.
2013-04Nanoindentation study for deformation twinning of magnesium single crystalShin, J. -H.; Kim, S. -H.; Ha, T. K.; Oh, K. H.; Choi, I. -S.; Han, H. N.
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