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Issue DateTitleAuthor(s)
2023-02Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric-Like C-Axis-Aligned Crystalline InGaSnO Semiconductor Thin-Film Transistors for Highly Integrated Neuromorphic ElectronicsLim, Taebin; Lee, Suhui; Lee, Jiseob; Choi, HyungJin; Jung, Byunglib; Baek, SeungHyub; Jang, Jin
1

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