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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2008-01-30Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistorKang, KyongTae; Kim, Il-Doo; Lim, Mi-Hwa; Kim, Ho-Gi; Hong, Jae-Min
2007-01-22High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substratesKang, KyongTae; Lim, Mi-Hwa; Kim, Ho-Gi; Kim, Il-Doo; Hong, Jae-Min
2006-11-13Low leakage current-stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator - for low voltage ZnO thin film transistorsLim, Mi-Hwa; Kang, KyongTae; Kim, Ho-Gi; Kim, Il-Doo; Choi, YongWoo; Tuller, Harry L.
2006-07-10Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputteringKim, Il-Doo; Lim, Mi-Hwa; Kang, KyongTae; Kim, Ho-Gi; Choi, Si-Young
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