KIST Library Institutional Repository

Browsing by Author Masafumi Yokoyama

Showing results 1 to 30 of 32

Issue Date	Title	Author(s)
2011-03	AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces	Noriyuki Taoka; Masafumi Yokoyama; 김상현; Rena Suzuki; Takuya Hoshii; Ryo Iida; 이성훈; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-10	Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility	김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2012-07	Characterization of Ni?GaSb Alloys Formed by Direct Reaction of Ni with GaSb	Cezar B. Zota; 김상현; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi
2014-07	Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors	김상현; Yuki Ikku; Masafumi Yokoyama; Ryosho Nakane; Jian Li; Yung-Chung Kao; Mitsuru Takenaka; Shinichi Takagi
2011-12	Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-07	Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sung-Hoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2014-06	Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors	김상현; Masafumi Yokoyama; Ryosho Nakene; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-05	Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding	Masafumi Yokoyama; Ryo Iida; Yuki Ikku; 김상현; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2015-07	High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions	Munetaka Noguchi; 김상현; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-04	High Mobility CMOS Technologies using III-V/Ge Channels on Si platform	Shinichi Takagi; 김상현; Masafumi Yokoyama; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka
2011-10	High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; 이성훈; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2014-04	High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability	김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-10	High-Performance InAs-On-Insulator n-MOSFETs with Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology	김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2015-05	III-V/Ge channel MOS device technologies in nano CMOS era	Shinichi Takagi; Rui Zhang; Junkyo Suh; 김상현; Masafumi Yokoyama; Koichi Nishi; Mitsuru Takenaka
2016-07	III-V/Ge MOS device technologies for low power integrated systems	김상현; Shinichi Takagi; Munetaka Noguchi; Minsoo Kim; ChihYu Chang; Masafumi Yokoyama; Koichi Nishi; Rui Zhang; Mengnan Ke; Mitsuru Takenaka
2012-06	III?V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding	Masafumi Yokoyama; 김상현; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tatsuro Maeda; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi
2012-10	Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties	Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; 김상현; Takuya Hoshii; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-12	Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistors	Noriyuki Taoka; Masafumi Yokoyama; 김상현; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-10	Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors	Noriyuki Taoka; Masafumi Yokoyama; 김상현; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2013-03	Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks	C. Y. Chang; Masafumi Yokoyama; 김상현; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2012-02	In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2016-10	Influence of interface traps inside the conduction band on the capacitance?voltage characteristics of InGaAs metal?oxide?semiconductor capacitors	김상현; Noriyuki Taoka; Masafumi Yokoyama; Rena Suzuki; Ryo Iida; Mitsuru Takenaka; Shinichi Takagi
2014-03	Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation	김상현; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2011-12	Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors	Ryo Iida; 김상현; Masafumi Yokoyama; Noriyuki Taoka; SangHoon Lee; Mitrusu Takenaka; Shinichi Takagi
2011-06	Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; 이성훈; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2011-01	Self-Aligned Metal Source/Drain InxGa1-xAs n-Meta-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Tasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2014-03	Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors	Masafumi Yokoyama; Koichi Nishi; 김상현; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi
2012-05	Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain	김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Tasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2014-01	Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys	Koichi Nishi; Masafumi Yokoyama; 김상현; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi
2011-09	Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers	Masafumi Yokoyama; Ryo Iida; 김상현; Noriyuki Taoka; Yuji Urabe; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada,; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi