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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2003-07-28Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layersLee, JH; Maikap, S; Kim, DY; Mahapatra, R; Ray, SK; No, YS; Choi, WK
2005-04Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substratesMaikap, S; Lee, JH; Mahapatra, R; Pal, S; No, YS; Choi, WK; Ray, SK; Kim, DY
2004-01Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayersMaikap, S; Lee, JH; Kim, DY; Mahapatra, R; Ray, SK; Song, JH; No, YS; Choi, WK
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