Showing results 1 to 14 of 14
Issue Date | Title | Author(s) |
---|---|---|
2013-10 | Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility | 김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2014-07 | Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors | 김상현; Yuki Ikku; Masafumi Yokoyama; Ryosho Nakane; Jian Li; Yung-Chung Kao; Mitsuru Takenaka; Shinichi Takagi |
2011-12 | Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2013-07 | Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sung-Hoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2011-10 | High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; 이성훈; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2014-04 | High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability | 김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2013-10 | High-Performance InAs-On-Insulator n-MOSFETs with Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology | 김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2012-02 | In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2014-03 | Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation | 김상현; Masafumi Yokoyama; Yuki Ikku; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2011-06 | Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni-InP metallic alloy | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; 이성훈; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2011-01 | Self-Aligned Metal Source/Drain InxGa1-xAs n-Meta-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; Sunghoon Lee; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Tasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2012-05 | Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Tasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2013-08 | Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
2014-04 | Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications | Minsoo Kim; Younghyun Kim; Masafumi Yokoyama; Ryosho Nakane; 김상현; Misturu Takenaka; Shinichi Takagi |