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Issue DateTitleAuthor(s)
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxyRyu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G.
2007-07-15Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diodeRyu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H.
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