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Issue DateTitleAuthor(s)
1998-07Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layerChoi, WJ; Han, SM; Shah, SI; Choi, SG; Woo, DH; Lee, S; Kim, SH; Lee, JI; Kang, KN; Cho, J
1

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