| 2016-11-25 | Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization | Choi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu |
| 2013-07 | Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices | Kim, Su-Dong; Ahn, Hyung-Woo; Shin, Sang Yeol; Jeong, Doo Seok; Son, Seo Hee; Lee, Hosun; Cheong, Byung-ki; Shin, Dong Wook; Lee, Suyoun |
| 2015-02-15 | EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se films | Choi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu |
| 2022-11 | Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films | Shin, Sang Yeol; Lee, Suyeon; Cheong, Byung-ki; Choi, Yong Gyu |
| 2018-06 | Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization | Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu |
| 2021-09 | Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 & nbsp;film probed via in situ EXAFS under DC electric field | Shin, Sang Yeol; Kim, Hyun; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
| 2014-09-01 | Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film | Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
