| 2004-10 | A new atomic layer deposition of W-N thin films | Sim, HS; 박지호; Kim, YT |
| 2003-10 | A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect | Sim, HS; Kim, SI; Jeon, H; Kim, YT |
| 2002-01 | Characteristics of plasma enhanced chemical vapor deposited W-B-N thin films | Kim, DJ; Sim, HS; Kim, SI; Kim, YT; Jeon, H |
| 2002-06 | Effects of NH3 plasma treatment on methyl silsequioxane for copper multi-level interconnect | Sim, HS; Kim, YT; Jeon, H |
| 2002-05-01 | Fabrication of AA6061/Al2O3p composites from elemental and alloy powders | Lee, KB; Sim, HS; Kim, YS; Han, JH; Kwon, H |
| 2001-03 | Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film | Kim, DJ; Sim, HS; Lee, S; Kim, YT; Kim, SI; Park, JW |
| 2003-08 | Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO2 high-k dielectrics | Youm, M; Sim, HS; Jeon, H; Kim, SI; Kim, YT |
| 2003-07 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect | Sim, HS; Kim, SI; Kim, YT |
