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Issue DateTitleAuthor(s)
2025-04Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfNx interfacial layerNam, Hyun Woo; Lee, Jae Hoon; Ryoo, Seung Kyu; Shin, Seong Jae; Ye, Kun Hee; Kim, Kyung Do; Byun, Seung yong; Lee, In Soo; Lee, Suk Hyun; Song, Jae Hee; Choi, Jung hae; Hwang, Cheol Seong
1

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