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Showing results 1 to 8 of 8

Issue DateTitleAuthor(s)
2011-10-03Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTeWu, Zhe; Zhang, Gang; Park, Youngwook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki
2009-05Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTeLee, Suyoun; Jeong, Jeung-hyun; Wu, Zhe; Park, Young-Wook; Kim, Won Mok; Cheong, Byung-ki
2012-10Fast and scalable memory characteristics of Ge-doped SbTe phase change materialsCheong, Byung-ki; Lee, Suyoun; Jeong, Jeung-hyun; Park, Sohee; Han, Seungwu; Wu, Zhe; Ahn, Dong-Ho
2010-03-29Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperatureWu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki
2012-07-31Infrared spectroscopic ellipsometry of Ge-doped SbTe alloysKang, Tae Dong; Sim, Kyung Ik; Kim, Jae Hoon; Wu, Zhe; Cheong, Byung-ki; Lee, Hosun
2012-10Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
2011-03Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
2010-01The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTePark, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki
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