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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2014-09-10A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of ViewSeok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Hyung; Kwon, Dae Eun; Lim, Hyungkwang; Kim, Gun Hwan; Jeong, Doo Seok; Hwang, Cheol Seong
2013-02-25Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathodeKim, Seong Keun; Choi, Byung Joon; Yoon, Kyung Jean; Yoo, Yeon Woo; Hwang, Cheol Seong
2016-02-02Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phasesLee, Woongkyu; Yoo, Sijung; Yoon, Kyung Jean; Yeu, In Won; Chang, Hye Jung; Choi, Jung-Hae; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong
2013-02Titanium dioxide thin films for next-generation memory devicesKim, Seong Keun; Kim, Kyung Min; Jeong, Doo Seok; Jeon, Woojin; Yoon, Kyung Jean; Hwang, Cheol Seong
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