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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2014-05-15Atomic layer deposition of HfO2 thin films using H2O2 as oxidantChoi, Min-Jung; Park, Hyung-Ho; Jeong, Doo Seok; Kim, Jeong Hwan; Kim, Jin-Sang; Kim, Seong Keun
2022-02Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin filmsCho, Ah-Jin; Jeon, Ji Hoon; CHUNG, HONG KEUN; Baek, In hwan; Yang, Kun; Park, Min Hyuk; BAEK, SEUNG HYUB; Kim, Seong Keun
2006-05-01Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistorsPark, Jaehoo; Park, Tae Joo; Cho, Moonju; Kim, Seong Keun; Hong, Sug Hun; Kim, Jeong Hwan; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon; Jeong, Ranju; Choi, Jung-Hae
2019-03Strategic Selection of the Oxygen Source for Low Temperature-Atomic Layer Deposition of Al2O3 Thin FilmJin, Hyun Soo; Kim, Dae Hyun; Kim, Seong Keun; Wallace, Robert M.; Kim, Jiyoung; Park, Tae Joo
2013-11Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layerRha, Sang Ho; Kim, Un Ki; Jung, Jisim; Hwang, Eun Suk; Lee, Seung Jun; Jean, Woojin; Yoo, Yeon Woo; Choi, Jung-Hae; Hwang, Cheol Seong
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