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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
-Comparison of ferroelectric hysteresis between Pt and RuO2 top electrodes for SrBi2Ta2O9/Pt and SrBi2Ta2O9/Si structuresSung-Kyun Lee; Ho Nyung Lee; Kim Yong Tae; 이철의
2001-04Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layerChoi, HS; Kim, YT; Kim, SI; Choi, IH
1998-08Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memoryShin, DS; Lee, HN; Kim, YT; Choi, IH; Kim, BH
1997-12-15Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistorKim, YT; Shin, DS
2005-05Property change of LiNbO3 fabricated by vapor transport equilibration processKang, B; Joo, GT; Rhee, BK
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