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Showing results 61 to 80 of 62991

Issue DateTitleAuthor(s)
2012-031-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current densityRena Suzuki; Noriyuki Taoka; M. Yokoyama; Sunghoon Lee; 김상현; Takuya Hoshii; Tetsuji Yasuda; W. Jevasuwan; Tatsuro Maeda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi
2000-081-Vinylimidazole-grafted chitosan condensing with DNA for non-viral systemJ. E. Ihm; G. W. Bae; J.-M. Kim; I. Y. Kim; I. H. Kim; 안광덕; 한동근
2005-06-081-베타메틸카바페넴 유도체 및 이의 제조방법강용구; 강재훈; 김동진; 김맹섭; 유경호; 이경석; 이관순
1980-03-131-부텐이합체의제조방법-
1993-02-181-아릴-1-(알파-(트리아졸릴)알킬)-1-실라시클로알칸및이들의제조방법-
1984-09-051-알킬-2-옥소-4-아실-1,2,3,4-테트라히드로피라진의제조방법-
1995-02-091-엔(N)-에틸시소마이신의제조방법-
1996-04-191-클로로-1,1-디플루오로에탄과 1,1,1-트리플루오로에탄의연속적제조방법-
1985-05-221-페닐-3(2,2-디알콕시)에틸-3,6-디아자헵탄-4,7-디온유도체의제조방법-
1985-05-221-페닐-8,8-디알콕시-3,6-디아조옥탄-4-온유도체의제조방법-
2017-081.3 μm submilliamp threshold quantum dot micro-lasers on Si정대환; YATING WAN; Justin Norman; Qiang Li; M. J. KENNEDY; DI LIANG; CHONG ZHANG; DUANNI HUANG; ZEYU ZHANG; ALAN Y. LIU; ALFREDO TORRES; ARTHUR C. GOSSARD; EVELYN L. HU; KEI MAY LAU; JOHN E. BOWERS
2019-031.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon정대환; Jianan Duan; Heming Huang; Bozhang Dong; Justin C. Norman; John E. Bowers; Frederic Grillot
1996-02-011.48 및 1.75 마이크로미터의 적외선을 방출하는 레이저유리및그의방출방법-
1999-051.5 ㎛ tapered semiconductor lasers with low-alpha structurePeter J.S. Heim; S.H. Cho; M. Dagenais; 한일기
1971-01-181.5-페닐(1.5-PHENYL)기의메타파라(META,PARA)-위치에치환기를지닌1,3,5-
1991-091.55 ㎛ gain in a short Er**3**+-doped zirconium glass fiber.조재철; 김명욱; 조운조; 최상삼
1999-111.55 ㎛ laser diode integrated with a tapered ridge mode transformer이기민; 변영태; 양지상; 우덕하; 정영철; 김선호
2006-021.55-um DFB Lasers over a Wide Temperature Range for Analog ApplicationBon Jo Koo; Han WooK song; Yong Kwan Kim; Chil Sung Park; Han Gwon Ryu; Kwang Soo Huh; Seung Bae Park; Zail Lhee; Hyosin Choe; 이석; Sang Kook Han
1992-011.8wt.% ThO2-텅스텐의 재결정화 거동안성욱; 유정하; 최주
2015-111/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatmentV Sindhuri; 손동혁; 이동기; Sung Hwan Sakong; 정윤하; 조인탁; 이종호; 김용태; Sorin Cristoloveanu; 배용호; 임기식; 이정희
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