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Issue Date | Title | Author(s) |
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2000-09-29 | Characteristics of GaN films grown on the stress-imposed Si(111) | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
2000-09 | The effect of N+-implanted Si(111) substrate and buffer layer on GaN films | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
2000-02-21 | Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates | Lee, HN; Kim, YT; Choh, SH |
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