2000-10 | Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Kim, SO; Woo, JJ; Song, JH |
2000-10 | Phosphors for plasma display panels | Kim, CH; Kwon, IE; Park, CH; Hwang, YJ; Bae, HS; Yu, BY; Pyun, CH; Guang-Yan Hong |
2000-12 | VUV excitation properties of LnAl(3)B(4)O(12): Re (Ln = Y, Gd; Re=Eu, Tb) | You, HP; Hong, GY; Zeng, XQ; Kim, CH; Pyun, CH; Yu, BY; Bae, HS |
2000-12 | Self-assembled InAs quantum dots on GaAs (100) and (311)A substrates | Cho, S; Choi, YK; Kim, EK |
2000-03 | Photoluminescences from Si nanocrystals in ion-beam-mixed Si/SiO2 layers | Chae, KH; Son, JB; Kim, HB; Im, S; Lyo, IW; Whang, CN |
2000-02 | Effect of surface modifications on spectral shift of electroluminescence of porous n-Si in S2O82- under cathodic bias | Lee, HG; Park, HS; Lim, HE; LEE, YEON HEE; Kim, KJ |
2000-01 | Role of hydrogen in the photoluminescence and the formation of nanocrystalline silicon | Choi, WC; Kim, CK; Kim, EK; Shim, CM; Jung, DG; Park, CY |
2000-01-19 | Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature | Kim, HB; Son, JH; Chae, KH; Jeong, JY; Lee, WS; Im, S; Song, JH; Whang, CN |