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Issue Date | Title | Author(s) |
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2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
2001-06 | Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs | Cho, S; Kim, EK |
2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
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