2003-05-22 | Formation process and microstructural evolution of Ni-silicide layers grown by chemical vapor deposition of Si on Ni substrates | Yoon, JK; Byun, JY; Kim, GH; Lee, JK; Yoon, HS; Hong, KT |
2003-02-15 | Gas transport in modified polysulfones with trimethylsilyl groups: effect of substitution site | Lee, KJ; Jao, JY; Kang, YS; Dai, Y; Robertson, GP; Guiver, MD; Won, J |
2003-03-27 | Characteristics of cathodic polarization at Pt/YSZ interface without the effect of electrode microstructure | Yoon, SP; Nam, SW; Kim, SG; Hong, SA; Hyun, SH |
2003-07-29 | Effect of Cl/H input ratio on the growth rate of MOSi2 coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl4-H-2 precursor gases | Yoon, JK; Kim, GH; Byun, JY; Lee, JK; Yoon, HS; Hong, KT |
2003-07-15 | Kinetics of chemical vapor deposition of Si on Ni substrates from a SiCl4-H-2 gas precursor mixture | Yoon, JK; Kim, GH; Byun, JY; Lee, JK; Kim, JS; Hong, KT |
2003-07 | Adsorption characteristics of toluene and trichloroethylene onto activated carbon fiber | Park, JW; Lee, YW; Choi, DK; Lee, SS |