| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2004-10 | The effects of strained sapphire(0001) substrate on the structural quality of GaN epilayer | Cho, YS; Kim, J; Park, YJ; Na, HS; Kim, HJ; Kim, HJ; Yoon, E; Kim, YW |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-07 | A micro-photoluminescence study of vertically stacked InGaAs-GaAs double-layer quantum dots | Choi, YC; Kim, TG; Park, YM; Park, YJ |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-12 | Coupling effect between InAs quantum dot and electric field-induced quantum dot | Kim, JH; Jung, JH; Kwack, KD; Kim, TW; Park, YJ |
| 2004-07 | Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-10 | Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy | Kim, JS; Kim, EK; Kim, HJ; Yoon, E; Park, IW; Park, YJ |
| 2004-09-06 | Enhanced Curie temperature of InMnP : Zn-T-C similar to 300 k | Shon, Y; Jeon, HC; Park, YS; Lee, WC; Lee, SJ; Kim, DY; Kim, HS; Kim, HJ; Kang, TW; Park, YJ; Yoon, CS; Chung, KS |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
