2004-12 | Characteristics in bilayer organic light-emitting diodes with variation of the film thickness | Lee, KJ; Yu, JW; Kim, JK; Kim, YC; Park, JH; Park, OO |
2004-08 | Distribution of Ge self-assembled quantum dots on SixGe1-x buffer layers | Chang, J; Kim, H |
2004-09 | Strong blue emission from Er3+ doped in AlxGa1-xN | Wakahara, A; Nakanishi, Y; Fujiwara, T; Okada, H; Yoshida, A; Ohshima, T; Kamiya, T; Kim, YT |
2004-10 | White light emitting silicon nanocrystals as nanophosphor | Lee, S; Cho, WJ; Han, IK; Choi, WJ; Lee, JI |
2004-09 | Bubble evolution and radiation mechanism for laser-induced collapsing bubble in water | Byun, KT; Kwak, HY; Karng, SW |
2004-06-30 | The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films | Son, JH; Kim, HB; Whang, CN; Chae, KH |
2004-11-22 | Comparison of visible photoluminescence from Si ion-irradiated SiO2/Si/SiO2 films fabricated by ion beam sputtering deposition and electron beam evaporation | Kim, HB; Son, JH; Whang, CN; Chae, KH |
2004-11-15 | Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI; Yoo, KH; Kim, HS; Park, CG |
2004-02 | Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH |
2004-02 | Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation | Son, JH; Kim, HB; Whang, CN; Sung, MC; Jeong, K; Im, S; Chae, KH |