2005-08-01 | Diluted magnetic semiconductor of p-type InMnP : Zn epilayer | Shon, Y; Jeon, HC; Park, YS; Lee, SJ; Kim, DY; Kim, HS; Kang, TW; Park, YJ; Yoon, CS; Kim, CK; Kim, EK; Kim, Y; Woo, YD |
2005-02 | The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD | Park, K; Ahn, E; Jeon, YJ; Cheong, HM; Kim, JS; Kim, EK; Lee, J; Park, YJ; Lee, GD; Yoon, E |
2005-07 | Photoluminescence analysis of white-light-emitting Si nanoparticles using effective mass approximation method | Lee, S; Cho, WJ; Kim, YD; Kim, EK; Park, JG |
2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |