Search
Results 1-3 of 3 (Search time: 0.004 seconds).
Item hits:
Issue Date | Title | Author(s) |
---|
2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
2005-11-01 | Optical properties of digital-alloy In-0.49(Ga1-zAlz0.51P/GaAs and InGaP/In-0.49(Ga1-zAlz)(0.51)P multi-quantum wells grown by molecular-beam epitaxy | Kim, JM; Park, CY; Lee, YT; Song, JD |
2005-02 | Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries | Yu, JS; Song, JD; Lee, YT; Lim, H |
Discover