| 2005-12 | Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure | Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, YH |
| 2005-07-01 | Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) | Zhao, ZM; Hul'ko, O; Kim, HJ; Liu, J; Shi, B; Xie, YH |
| 2005-02 | The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD | Park, K; Ahn, E; Jeon, YJ; Cheong, HM; Kim, JS; Kim, EK; Lee, J; Park, YJ; Lee, GD; Yoon, E |
| 2005-02 | Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier | Jung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK |
| 2005-01 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Lee, JI; Yoo, KH |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-02 | Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy | Choi, WJ; Rho, H; Song, JD; Lee, JI; Cho, YH |
| 2005-02 | Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer | Cho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK |
| 2005-05 | Estimation of built-in dipole moment in InAs quantum dots | Park, YM; Park, YJ; Song, JD; Lee, JI |
