2011-10-10 | Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires | Kim, Kyoungwon; Debnath, Pulak Chandra; Lee, Deuk-Hee; Kim, Sangsig; Lee, Sang Yeol |
2011-08-01 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
2011-07 | Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature | Chun, Yoon Soo; Chang, Seongpil; Lee, Sang Yeol |
2011-06-01 | Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz | Lee, Deuk-Hee; Park, Dong-Hoon; Kim, Sangsig; Lee, Sang Yeol |
2011-08-08 | Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress | Kim, Bosul; Chong, Eugene; Kim, Do Hyung; Jeon, Yong Woo; Kim, Dae Hwan; Lee, Sang Yeol |
2011-07 | Effect of oxygen on the threshold voltage of a-IGZO TFT | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
2011-12 | Effect of Indium Contents on the Solution-Processed SiInZnO Thin Film Transistors Annealed at Low Temperature | Park, Ki-Ho; Chong, Eugene; Ju, Byeong-Kwon; Lee, Sang Yeol |
2011-07 | The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors | Chong, Eugene; Kim, Seung Han; Cho, Eun Ah; Jang, Gun-Eik; Lee, Sang Yeol |
2011-04-29 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
2011-04-29 | Zinc cadmium oxide thin film transistors fabricated at room temperature | Lee, Deuk-Hee; Kim, Sangsig; Lee, Sang Yeol |