2018-10 | High-efficient and defect tolerant Co2MnSb ternary Heusler alloy for spintronic application | Enamullah; Lee, Seung-Cheol |
2018-08-27 | High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer | Roh, IlPyo; Kim, SangHyeon; Geum, Dae-Myeong; Lu, Wenjie; Song, YunHeub; del Alamo, Jesus A.; Song, JinDong |
2018-01-10 | Ultrafast Sodiation of Single-Crystalline Sn Anodes | Choi, Yong-Seok; Byeon, Young-Woon; Park, Jun-Hyoung; Seo, Jong-Hyun; Ahn, Jae-Pyoung; Lee, Jae-Chul |
2018-05 | Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel | Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon |
2018-11 | High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1-xSb Continuously Graded Buffer Layer | Kang, Soo Seok; Park, Suk In; Shin, Sang Hoon; Shim, Cheol-Hwee; Choi, Suk-Ho; Song, Jin Dong |