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Issue DateTitleAuthor(s)
2019-12-15Atomic layer deposition of Ta-doped SnO2 films with enhanced dopant distribution for thermally stable capacitor electrode applicationsCho, Cheol Jin; Pyeon, Jung Joon; Hwang, Cheol Seong; Kim, Jin-Sang; Kim, Seong Keun
2019-12A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlatticesPark, Min Hyuk; Kim, Han Joon; Lee, Gwangyeob; Park, Jaehong; Lee, Young Hwan; Kim, Yu Jin; Moon, Taehwan; Kim, Keum; Hyun, Seung Dam; Park, Hyun Woo; Chang, Hye Jung; Choi, Jung-Hae; Hwang, Cheol Seong
2019-12-15Theoretical understanding of the catalyst-free growth mechanism of GaAs < 111 > B nanowiresYeu, In Won; Han, Gyuseung; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae
2019-04Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch ArrayKim, Guhyun; Kornijcuk, Vladimir; Kim, Dohun; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok
2019-04-10Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles studyLiu, Kai; Ko, Eunjung; Kim, Sangtae; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae
2019-03-07Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a-GeO2/Ge Structures Using the First-Principles Scattering-State MethodKo, Eunjung; Liu, Kai; Hwang, Cheol Seong; Choi, Hyoung Joon; Choi, Jung-Hae
2019-04-24High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer DepositionBaek, In-Hwan; Pyeon, Jung Joon; Han, Seong Ho; Lee, Ga-Yeon; Choi, Byung Joon; Han, Jeong Hwan; Chung, Taek-Mo; Hwang, Cheol Seong; Kim, Seong Keun
2019-09-04A first-principles study of the structural and electronic properties of the epitaxial Ge(111)/La2O3(001) heterostructureLiu, Kai; Ko, Eunjung; Hwang, Cheol Seong; Choi, Jung-Hae
2019-08Role of the Short-Range Order in Amorphous Oxide on MoS2/a-SiO2 and MoS2/a-HfO2 InterfacesPark, Jaehong; Yeu, In Won; Han, Gyuseung; Hwang, Cheol Seong; Choi, Jung-Hae
2019-10-17Ferroelectric switching in bilayer 3R MoS(2 )via interlayer shear mode driven by nonlinear phononicsPark, Jaehong; Yeu, In Won; Han, Gyuseung; Hwang, Cheol Seong; Choi, Jung-Hae

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