2023-07 | Grain boundary engineering strategy for simultaneously reducing the electron concentration and lattice thermal conductivity in n-type Bi2Te2.7Se0.3-based thermoelectric materials | Lee, Seunghyeok; Jung, Sung-Jin; Park, Gwang Min; Hong, Junpyo; Lee, Albert S.; Baek, Seung-Hyub; Kim, Heesuk; Park, Tae Joo; Kim, Jin-Sang; Kim, Seong Keun |
2023-03 | Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off (Nov ,10.1007/s13391-022-00386-0, 2022) | Ning, Ruiguang; Jung, Soo Young; Choi, Haneul; Lee, Byeong-hyeon; Kim, Min-Seok; Choi, Hyung-Jin; Lee, Jun Young; Park, Jin Soo; Jung, Sung-Jin; Jang, Ho Won; Won, Sung Ok; Chang, Hye Jung; Jang, Ji-Soo; Lee, Kyu Hyoung; Lee, Byung Chul; Baek, Seung-Hyub |
2023-03 | Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off | Ning, Ruiguang; Jung, Soo Young; Choi, Haneul; Lee, Byeong-hyeon; Kim, Min-Seok; Choi, Hyung-Jin; Lee, Jun Young; Park, Jin Soo; Jung, Sung-Jin; Jang, Ho Won; Won, Sung Ok; Chang, Hye Jung; Jang, Ji-Soo; Lee, Kyu Hyoung; Lee, Byung Chul; Baek, Seung-Hyub |
2023-08 | Suppression of crosstalk in row-column actuator array using regulation of ferroelectric polarization | Park, Jin Soo; Jung soo young; Kim, Dong Hun; Park, Jung Ho; Jang, Ho Won; Kim, Tae Geun; Baek, Seung-Hyub; Lee, Byung Chul |
2023-04 | Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2023-03 | Study of the relationship between process parameters, volatility of Te, and physical properties in n-type Bi2Te3-based alloys for the reproducible fabrication of high-performance thermoelectric materials | Jung, Sung-Jin; Lim, Sang-Soon; Lee, Byeong-Hyeon; Won, Sung Ok; Park, Hyung-Ho; Kim, Seong Keun; Kim, Jin-Sang; Baek, Seung-Hyub |
2023-12 | Understanding secondary phase inclusion and composition variations in the microstructure design of n-type Bi2Te3 alloys via selective dissolution of KCl | Park, Gwang Min; Lee, Seunghyeok; Kang, Jun-Yun; Baek, Seung-Hyub; Kim, Heesuk; Kim, Jin-Sang; Kim, Seong Keun |
2023-07 | Nucleation and Layer Closure Behavior of Iridium Films Grown Using Atomic Layer Deposition | Chung, Hong Keun; Kim, Han; Jeon, Jihoon; Kim, Sung-Chul; Won, Sung Ok; Harada, Ryosuke; Tsugawa, Tomohiro; Chung, Yoon Jang; Baek, Seung-Hyub; Park, Tae Joo; Kim, Seong Keun |
2023-06 | Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films | 전지훈; Kuk, Song-Hyeon; 조아진; Baek, Seung-Hyub; Kim, Sang-Hyeon; Kim, Seong Keun |
2023-02 | Ultrahigh dielectric permittivity in oxide ceramics by hydrogenation | Duong, Nguyen Xuan; Jang, Ji-Soo; Jung, Min-Hyoung; Bae, Jong-Seong; Ahn, Chang Won; Jin, Jong Sung; Ihm, Kyuwook; Kim, Gyehyeon; Lim, So Yeon; Lee, Jongmin; Dung, Dang Duc; Lee, Soonil; Kim, Young -Min; Lee, Sanghan; Yang, Sang Mo; Sohn, Changhee; Kim, Ill Won; Jeong, Hu Young; Baek, Seung-Hyub; Kim, Tae Heon |