| 2023-07 | Grain boundary engineering strategy for simultaneously reducing the electron concentration and lattice thermal conductivity in n-type Bi2Te2.7Se0.3-based thermoelectric materials | Lee, Seunghyeok; Jung, Sung-Jin; Park, Gwang Min; Hong, Junpyo; Lee, Albert S.; Baek, Seung-Hyub; Kim, Heesuk; Park, Tae Joo; Kim, Jin-Sang; Kim, Seong Keun |
| 2023-06 | Breathable MOFs Layer on Atomically Grown 2D SnS2 for Stable and Selective Surface Activation | Kim, gwang su; Lim, Yunsung; Joonchul Shin; Yim Jae-Gyun; Hur, Sunghoon; Song, Hyun-Cheol; BAEK, SEUNG HYUB; Kim, Seong Keun; Kim, Jihan; 강종윤; Jang, JiSoo |
| 2023-03 | Study of the relationship between process parameters, volatility of Te, and physical properties in n-type Bi2Te3-based alloys for the reproducible fabrication of high-performance thermoelectric materials | Jung, Sung-Jin; Lim, Sang-Soon; Lee, Byeong-Hyeon; Won, Sung Ok; Park, Hyung-Ho; Kim, Seong Keun; Kim, Jin-Sang; Baek, Seung-Hyub |
| 2023-10 | Mitigating Heavy Ion Irradiation-Induced Degradation in p-type SnO Thin-Film Transistors at Room Temperature | Al-Mamun, Nahid Sultan; Rasel, Md Abu Jafar; Wolfe, Douglas E.; Haque, Aman; Schoell, Ryan; Hattar, Khalid; Ryu, Seung Ho; Kim, Seong Keun |
| 2023-12 | Understanding secondary phase inclusion and composition variations in the microstructure design of n-type Bi2Te3 alloys via selective dissolution of KCl | Park, Gwang Min; Lee, Seunghyeok; Kang, Jun-Yun; Baek, Seung-Hyub; Kim, Heesuk; Kim, Jin-Sang; Kim, Seong Keun |
| 2023-07 | Nucleation and Layer Closure Behavior of Iridium Films Grown Using Atomic Layer Deposition | Chung, Hong Keun; Kim, Han; Jeon, Jihoon; Kim, Sung-Chul; Won, Sung Ok; Harada, Ryosuke; Tsugawa, Tomohiro; Chung, Yoon Jang; Baek, Seung-Hyub; Park, Tae Joo; Kim, Seong Keun |
| 2023-06 | Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films | 전지훈; Kuk, Song-Hyeon; 조아진; Baek, Seung-Hyub; Kim, Sang-Hyeon; Kim, Seong Keun |
| 2023-04 | High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor | Chae, Myeong Gil; Kim, Jina; Jang, Hee Won; Park, Bo Keun; Chung, Taek-Mo; Kim, Seong Keun; Han, Jeong Hwan |
| 2023-02 | Area-Selective Atomic Layer Deposition of SnS2 Nanosheets for Applications of Back-End-of-Line-Compatible Transistors | Yim, Jaegyun; Chung, Hong Keun; Ryu, Seung Ho; Kim, Han; Won, Sung Ok; Eom, Taeyong; Chung, Taek-Mo; Kim, Seong Keun |
| 2023-11 | Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/ graphene heterostructure with rebound depolarization | Jang, Seonghoon; Kim, Yongjun; Jeon, Jihoon; Ham, Seonggil; Choi, Sanghyeon; Yang, Jehyeon; Kim, Seong Keun; Jeon, Sanghun; Jang, Jingon; Wang, Gunuk |
