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Issue Date | Title | Author(s) |
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2017-12 | 10-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch | Lu, W.; Roh, I. P.; Geum, D. -M.; del Alamo, J. A.; Song, J. D.; Kong, L.; Kim, S. -H. |