DSpace at KISTKIST Conference PaperOthers

Full metadata record

DC Field Value Language
dc.contributor.authorSu youn, Kim-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorT.W. Kim-
dc.date.accessioned2024-01-13T00:05:30Z-
dc.date.available2024-01-13T00:05:30Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100129-
dc.languageEnglish-
dc.subjectMBE-
dc.subjectAlAsSb buffer layer-
dc.subjectInAs on GaAs substrate-
dc.subjectstructural property-
dc.subjectelectron mobility-
dc.subjectspintronics-
dc.subjectcoherent THz generation-
dc.titleGrowth of InAs layer on GaAs with AlAs0.32Sb0.68 buffer and the effect of thickness of InAs on its physical properties-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationICPS2010, pp.P1-300-
dc.citation.titleICPS2010-
dc.citation.startPageP1-300-
dc.citation.conferencePlaceKO-
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Simple Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE