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dc.contributor.authorSu youn, Kim-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorLee Eunhye-
dc.contributor.authorHa Seung Kyu-
dc.contributor.authorShin Sang Hoon-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorT.W. Kim-
dc.date.accessioned2024-01-13T00:05:31Z-
dc.date.available2024-01-13T00:05:31Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100130-
dc.languageEnglish-
dc.subjectInAlAs/AlGaAs-
dc.subjectself assembled quantum dot-
dc.subject808-nm-
dc.subjectlaser diode-
dc.subjectgrowth parameters-
dc.subjectphotoluminescence-
dc.titleStructural and optical properties of InAlAs/AlGaAs self-assembled quantum dots on GaAs substrate for the 808-nm wavelength-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationICPS2010, pp.P1-175-
dc.citation.titleICPS2010-
dc.citation.startPageP1-175-
dc.citation.conferencePlaceKO-
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