DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorSu youn, Kim-
dc.contributor.authorLee Eunhye-
dc.contributor.authorHa Seung Kyu-
dc.contributor.authorShin Sang Hoon-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorT.W. Kim-
dc.date.accessioned2024-01-13T00:30:28Z-
dc.date.available2024-01-13T00:30:28Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100315-
dc.languageEnglish-
dc.subjectInAlAs/AlGaAs-
dc.subjectquantum dot-
dc.subject808 nm-
dc.subjectlaser diode-
dc.titlePhysical properties of 808-nm InAlAs/AlGaAs quantum dots on GaAs substrate-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationQuantum Dot 2010-
dc.citation.titleQuantum Dot 2010-
dc.citation.conferencePlaceUK-
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