MEE 기법으로 성장한 InGaAs 양자점의 크기 변화에 따른 광발광 특성분석

Authors
Ha Seung KyuNam Ki ChoSONG, JIN-DONG박재규이동한Choi, Won JunLee, Jung Il
Issue Date
2010-02
Citation
한국진공학회 제38회 정기학술대회
Keywords
migration enhanced epitaxy; quantum dot; power dependent photoluminescence; level spacing; single photon source
URI
https://pubs.kist.re.kr/handle/201004/100318
Appears in Collections:
KIST Conference Paper > Others
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