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dc.contributor.authorGaram Kim-
dc.contributor.authorSang Wan Kim-
dc.contributor.authorJae Young Song-
dc.contributor.authorJong Pil Kim-
dc.contributor.authorKyung-Chang Ryoo-
dc.contributor.authorJeong-Hoon Oh-
dc.contributor.authorPark Jae Hyun-
dc.contributor.authorHyun Woo Kim-
dc.contributor.authorByung-Gook Park-
dc.date.accessioned2024-01-13T00:32:20Z-
dc.date.available2024-01-13T00:32:20Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100448-
dc.languageEnglish-
dc.subject1T DRAM-
dc.subjectZ-RAM-
dc.subjectSOI-
dc.subjectRaised body-
dc.titleBody-Raised Double-Gate Structure for 1T DRAM-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2009 IEEE Nanotechnology Materilas and Devices Conference, pp.259 - 263-
dc.citation.title2009 IEEE Nanotechnology Materilas and Devices Conference-
dc.citation.startPage259-
dc.citation.endPage263-
dc.citation.conferencePlaceUS-
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