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dc.contributor.authorJae Young Song-
dc.contributor.authorJong Pil Kim-
dc.contributor.authorSang Wan Kim-
dc.contributor.authorJeong-Hoon Oh-
dc.contributor.authorKyung-Chang Ryoo-
dc.contributor.authorPark Jae Hyun-
dc.contributor.authorGaram Kim-
dc.contributor.authorHyun Woo Kim-
dc.contributor.authorAtteq Ur Rehman-
dc.contributor.authorJong Duk Lee-
dc.contributor.authorHyungcheol Shin-
dc.contributor.authorByung-Gook Park-
dc.date.accessioned2024-01-13T00:32:21Z-
dc.date.available2024-01-13T00:32:21Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100449-
dc.languageEnglish-
dc.titleBuried-Gate Fin and Recess Channel MOSFET for Sub-30 nm DRAM Cell Transistors with High Performance and Low GIDL Current-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE 2009 Silicon Nanoelectronics Workshop-
dc.citation.titleIEEE 2009 Silicon Nanoelectronics Workshop-
dc.citation.conferencePlaceJA-
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