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dc.contributor.authorShin Sang Hoon-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorSu youn, Kim-
dc.contributor.authorKim Hyung-jun-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorHan, Suk Hee-
dc.date.accessioned2024-01-13T03:01:04Z-
dc.date.available2024-01-13T03:01:04Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/101690-
dc.languageEnglish-
dc.titleHigh mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAMC 2008-
dc.citation.titleAMC 2008-
dc.citation.conferencePlaceKO-
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KIST Conference Paper > Others
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