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Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure

Authors

Shin Sang Hoon; Lim Ju-Young; SONG, JIN-DONG; Han, Suk Hee; TG Kim

Citation

ICAMD 2007

Keywords

InAs; AlSb

URI

https://pubs.kist.re.kr/handle/201004/101959

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KIST Conference Paper > Others

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