DSpace at KIST: Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs)

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DC Field	Value	Language
dc.contributor.author	SONG, JIN-DONG	-
dc.contributor.author	Lim Ju-Young	-
dc.contributor.author	Shin Sang Hoon	-
dc.contributor.author	Chang, Joonyeon	-
dc.contributor.author	Choi, Won Jun	-
dc.date.accessioned	2024-01-13T03:31:06Z	-
dc.date.available	2024-01-13T03:31:06Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/101960	-
dc.language	English	-
dc.subject	InSb	-
dc.subject	QD	-
dc.subject	GaAs	-
dc.title	Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs)	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	QD 2008	-
dc.citation.title	QD 2008	-
dc.citation.conferencePlace	KO	-

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