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dc.contributor.authorJung Kyung Wuk-
dc.contributor.authorKim, Kwang Woong-
dc.contributor.authorRyn Sung-Pil-
dc.contributor.authorNam Ki Cho-
dc.contributor.authorPark Sung Jun-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorYang Hae-Suk-
dc.date.accessioned2024-01-13T05:32:11Z-
dc.date.available2024-01-13T05:32:11Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/103106-
dc.title.alternative980 nm 파장대역을 갖는 InGaAs 양자점 레이저 다이오드의 발진특성-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제33회 한국진공학회 하계학술대회, v.16, no.2, pp.357-
dc.citation.title제33회 한국진공학회 하계학술대회-
dc.citation.volume16-
dc.citation.number2-
dc.citation.startPage357-
dc.citation.endPage357-
dc.citation.conferencePlaceKO-
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