DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorWu Zhe-
dc.contributor.authorLee Suyoun-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorKim Inho-
dc.contributor.authorKim Seul-Cham-
dc.contributor.authorKyu Hwan Oh-
dc.contributor.authorCHEONG, BYUNG KI-
dc.date.accessioned2024-01-13T06:03:49Z-
dc.date.available2024-01-13T06:03:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/103495-
dc.languageEnglish-
dc.titleMaterial and Device Characteristics of Ge-doped SbTe-N Phase Change Memory Material-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMaterials Research Society-
dc.citation.titleMaterials Research Society-
dc.citation.conferencePlaceUS-
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