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dc.contributor.authorCHEONG, BYUNG KI-
dc.contributor.authorKim Inho-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorWu Zhe-
dc.contributor.authorLEE, TAEK SUNG-
dc.contributor.authorKIM, WON MOK-
dc.contributor.authorDae-Hwan Kang-
dc.contributor.authorHee-Suk Chung-
dc.contributor.authorKim Seul-Cham-
dc.contributor.authorKyu Hwan Oh-
dc.date.accessioned2024-01-13T07:32:09Z-
dc.date.available2024-01-13T07:32:09Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/104169-
dc.languageEnglish-
dc.subjectphase change memory material-
dc.subjecthigh density memory-
dc.subjectNon-volatile Memory-
dc.subjectGe-doped SbTe-
dc.subjectnitrogen-
dc.subjectoxygen-
dc.titlePhase Change Material for Potential Use in High density Non-volatile Memory-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2006 EPCOS (European Phase Change Ovonic Science Symposium)-
dc.citation.title2006 EPCOS (European Phase Change Ovonic Science Symposium)-
dc.citation.conferencePlaceFR-
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