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dc.contributor.authorHo Jung Chang-
dc.contributor.authorKang Mo Suh-
dc.contributor.authorPark Ji Ho-
dc.contributor.authorHo Sung Chang-
dc.contributor.authorSoon Chan Hong-
dc.contributor.authorKim, Yong Tae-
dc.contributor.authorMakoto Ishida-
dc.date.accessioned2024-01-13T10:03:26Z-
dc.date.available2024-01-13T10:03:26Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105576-
dc.languageEnglish-
dc.titleElectrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si Substrate-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInternational Conference on Electrical Engineering 2004, v.1, pp.1 - 6-
dc.citation.titleInternational Conference on Electrical Engineering 2004-
dc.citation.volume1-
dc.citation.startPage1-
dc.citation.endPage6-
dc.citation.conferencePlaceJA-
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