DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorS.H. Lee-
dc.contributor.authorY.N. Hwang-
dc.contributor.authorS.Y. Lee-
dc.contributor.authorK.C. Ryoo-
dc.contributor.authorS.J. Ahn-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorC.W. Jeong-
dc.contributor.authorY.-T. Kim-
dc.contributor.authorG.H. Koh-
dc.contributor.authorG.T. Jeong-
dc.contributor.authorH.S. Jeong-
dc.contributor.authorKinam Kim-
dc.date.accessioned2024-01-13T10:32:52Z-
dc.date.available2024-01-13T10:32:52Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105808-
dc.languageEnglish-
dc.subjectfull integration-
dc.subject64Mb-
dc.subjectPRAM-
dc.subjecthigh density-
dc.subjectcell characteristics-
dc.titleFull Integration and Cell Characteristics for 64Mb Nonvolatile PRAM-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2004 Symposium on VLSI Technology-Digest of Technical Papers, pp.20 - 21-
dc.citation.title2004 Symposium on VLSI Technology-Digest of Technical Papers-
dc.citation.startPage20-
dc.citation.endPage21-
dc.citation.conferencePlaceUS-
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