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dc.contributor.authorJ. H. Park-
dc.contributor.authorW.C. Jeong-
dc.contributor.authorH. J. Kim-
dc.contributor.authorJ. H. Oh-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorG. H. Koh-
dc.contributor.authorG. T. Jeong-
dc.contributor.authorH. S. Jeong-
dc.contributor.authorY. J. Jeong-
dc.contributor.authorS. L. Cho-
dc.contributor.authorJ. E. Lee-
dc.contributor.authorH. J. Kim-
dc.contributor.authorKinam Kim-
dc.date.accessioned2024-01-13T10:32:53Z-
dc.date.available2024-01-13T10:32:53Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105809-
dc.languageEnglish-
dc.subjectMRAM-
dc.subjectmodified metal line-
dc.titleAn 8F2 MRAM Technology using Modified Metal Line-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEDM Technical Digest, pp.34.3.1 - 34.3.4-
dc.citation.titleIEDM Technical Digest-
dc.citation.startPage34.3.1-
dc.citation.endPage34.3.4-
dc.citation.conferencePlaceUS-
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