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dc.contributor.authorY.N. Hwang,-
dc.contributor.authorS. H. Lee-
dc.contributor.authorS. J. Ahn-
dc.contributor.authorS. Y. Lee-
dc.contributor.authorK. C. Ryoo-
dc.contributor.authorH. S. Hong-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorY. Fai-
dc.contributor.authorJ. H. Oh-
dc.contributor.authorH. J. Kim-
dc.contributor.authorW. C. Jeong-
dc.contributor.authorJ. H. Park-
dc.contributor.authorH. Horii-
dc.contributor.authorY. H. Ha-
dc.contributor.authorJ.H. Yi-
dc.contributor.authorG. H. Koh-
dc.contributor.authorG. T. Jeong-
dc.contributor.authorH. S. Jeong-
dc.contributor.authorKinam Kim-
dc.date.accessioned2024-01-13T10:32:54Z-
dc.date.available2024-01-13T10:32:54Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105810-
dc.languageEnglish-
dc.subjectwriting Current-
dc.subjectphase change RAM-
dc.titleWriting Current Reduction for High-density Phase-change RAM-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEDM Technical Digest, pp.37.1.1 - 37.1.4-
dc.citation.titleIEDM Technical Digest-
dc.citation.startPage37.1.1-
dc.citation.endPage37.1.4-
dc.citation.conferencePlaceUS-
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KIST Conference Paper > Others
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