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dc.contributor.authorS. H. Hwang-
dc.contributor.authorShin, Jae Cheol-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorY. M. Park-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorPark, Young Ju-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorCho, Woon Jo-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorJ. W. Choe-
dc.date.accessioned2024-01-13T11:00:36Z-
dc.date.available2024-01-13T11:00:36Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105927-
dc.languageEnglish-
dc.subjectquantum dot-
dc.subjectdielectric capping-
dc.subjectthermal treatment-
dc.titleThermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO₂ capping layer-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2003 IEEE International Conference on Plasma Science, pp.427-
dc.citation.title2003 IEEE International Conference on Plasma Science-
dc.citation.startPage427-
dc.citation.endPage427-
dc.citation.conferencePlaceKO-
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